Field effect transistor and method for producing a field...

Details Field effect transistor and method for producing a field... Field effect transistor and method for producing a field...

2006-05-12

2010-10-26

Trinh, Michael (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S343000, C257S349000, C257S336000, C438S289000, C438S290000, C438S291000

Reexamination Certificate

active

07821062

ABSTRACT:
A field effect transistor is provided having a source region, a drain region formed in a first well region, and a channel region. The first well region is doped with doping atoms of a first conductivity type. At least a part of the channel region which extends into the first well region is doped with doping atoms of a second conductivity type, the second conductivity type being a different conductivity type than the first conductivity type.

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High-Voltage Drain Extended MOS Transistors for 0.18-μm Logic CMOS Process, J.C. Mitros, et al., IEEE Transactions on Electron Devices, vol. 48, No. 8, pp. 1751-1755, Aug. 2001.

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