Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-31
2010-06-15
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000, C257S353000, C257S390000, C257S392000, C257SE21415, C257SE21442, C257SE21444, C257SE21648, C438S150000, C438S151000, C438S157000
Reexamination Certificate
active
07737506
ABSTRACT:
An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Depressions and projections with stripe shape or rectangular shape are formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film along the depressions and projections with stripe shape of the insulating film, or along a longitudinal axis direction or a transverse axis direction of the rectangular shape. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave laser light may also be used.
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Akiba Mai
Arao Tatsuya
Isobe Atsuo
Kokubo Chiho
Miyairi Hidekazu
Nguyen Dao H
Robinson Eric J.
Robinson Law Office, P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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