Semiconductor device comprising a stress applying insulating...

Details Semiconductor device comprising a stress applying insulating... Semiconductor device comprising a stress applying insulating...

2006-07-24

2010-10-26

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S637000, C257S274000, C257SE21487, C257SE27060, C257SE21640

Reexamination Certificate

active

07821072

ABSTRACT:
In a semiconductor device, a transistor in an N-type logic region NL is covered with a tensile stress applying film and a transistor in a P-type logic region PL is covered with a compressive stress applying film. Transistors in a P-type SRAM region PS and an N-type SRAM region NS are covered with a layered film including a tensile stress applying film and a compressive stress applying film.

REFERENCES:
patent: 2003/0181005 (2003-09-01), Hachimine et al.
patent: 2005/0093078 (2005-05-01), Chan et al.
patent: 2006/0113568 (2006-06-01), Chan et al.
patent: 2006/0226490 (2006-10-01), Burnett et al.
patent: 2003-273240 (2003-09-01), None
Chinese Office Action, w/ English translation thereof, issued in Chinese Patent Application No. CN 200610110149.0 dated Mar. 13, 2009.

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