Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-27
2010-06-22
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S332000, C257S333000, C257S334000, C257SE29201
Reexamination Certificate
active
07741676
ABSTRACT:
A semiconductor apparatus includes a cell section including at least two transistors. A layer interval insulation coat is formed at least overlying the gate electrode use polysilicon and the gate contact use polysilicon. A source electrode metal coat is formed overlying the semiconductor substrate and insulated from the gate electrode use polysilicon and the gate contact use polysilicon, and is electrically connected to the body diffusion layer and the source diffusion layer. A gate use connection hole is formed on the layer interval insulation coat overlying the gate contact use polysilicon. The gate use connection hole has a width larger than that of the trench. A gate electrode metal coat is formed on the gate use connection hole and the layer interval insulation coat. The polysilicon coat is formed at the same level or lower than the surface of the semiconductor substrate.
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Cooper & Dunham LLP
Ricoh & Company, Ltd.
Soward Ida M
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