Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2008-05-28
2010-02-23
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C977S890000, C977S936000
Reexamination Certificate
active
07666763
ABSTRACT:
This invention provides a substrate structure capable of controlling the threshold voltage of a MOS transistor independently of the substrate concentration and easily suppressing a short channel effect caused by reducing the channel length. A first nanosilicon film formed from nanosilicon grains having the same grain size is formed on a silicon oxide film on the surface of a silicon substrate. A silicon nitride film is formed on the first nanosilicon film. Then, a second nanosilicon film having an average grain size different from that of the first nanosilicon film is formed. A semiconductor circuit device is formed on a thus manufactured nanosilicon semiconductor substrate.
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Kumagai Akira
Murao Yukinobu
Numasawa Yoichiro
Canon Anelva Corporation
Fitzpatrick ,Cella, Harper & Scinto
Geyer Scott B
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