Semiconductor device and method for manufacturing...

Details Semiconductor device and method for manufacturing... Semiconductor device and method for manufacturing...

2009-02-09

2010-06-08

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S640000

Reexamination Certificate

active

07732879

ABSTRACT:
Provided are a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes: a gate electrode formed of polysilicon on a substrate with a gate insulating layer interposed between the gate electrode and the substrate; a source region and a drain region formed on the substrate on either side of the gate electrode; a PMD (poly-metal dielectric) liner nitride layer having a non-stoichiometric structure formed on the gate electrode, the source region, and the drain region; and an interlayer insulating layer formed on the PMD liner nitride layer.

REFERENCES:
patent: 7314814 (2008-01-01), Lee
patent: 7507619 (2009-03-01), Kim
patent: 2006/0084247 (2006-04-01), Liu
patent: 2006/0269693 (2006-11-01), Balseanu et al.

Affiliated with

Also associated with

Rating

Semiconductor device and method for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4199547