Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-23
2010-10-19
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C257S412000, C257S298000, C438S240000, C438S393000, C438S396000, C438S785000
Reexamination Certificate
active
07816716
ABSTRACT:
Source/drain diffusion layers and a channel region are formed in a polysilicon thin film formed on a substrate made of glass or the like, and furthermore, a gate electrode6is formed via a gate insulating film. A silicon hydronitride film is formed on the interlayer dielectric film, whereby the hydrogen concentration in an active element region including a switching thin film transistor can be maintained at a high level, and Si—H bonds in the silicon thin film become stable. In addition, by providing a ferroelectric film on the silicon hydronitride film via a lower electrode formed of a conductive oxide film, whereby the oxygen concentration of the ferroelectric capacitive element layer can be maintained at a high level, and generation of oxygen deficiency in the ferroelectric film is prevented.
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Chiu Tsz K
McGinn IP Law Group PLLC
NEC Corporation
Smith Zandra
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