Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-26
2010-02-23
Pham, Hoai v (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S336000, C257SE29257
Reexamination Certificate
active
07667267
ABSTRACT:
A semiconductor device includes: a semiconductor substrate having a first semiconductor layer, an insulation layer and a second semiconductor layer, which are stacked in this order; a LDMOS transistor disposed on the first semiconductor layer; and a region having a dielectric constant, which is lower than that of the first or second semiconductor layer. The region contacts the insulation layer, and the region is disposed between a source and a drain of the LDMOS transistor. The device has high withstand voltage in a direction perpendicular to the substrate.
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DENSO CORPORATION
Pham Hoai v
Posz Law Group , PLC
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