Magnetic memory cell reading apparatus

Details Magnetic memory cell reading apparatus Magnetic memory cell reading apparatus

2005-12-07

2010-10-05

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

07808813

ABSTRACT:
There is provided a magnetic memory device capable of reading information even with a lower power supply voltage.The magnetic memory device is equipped with a plurality of storage cells laid out in two dimensions in (i+1) rows and (j+1) columns (where i, j are integers of one or higher). Two magnetoresistive effect revealing bodies2a, 2bare disposed in each of the storage cells1, and each storage cell includes: a first stage circuit41that supplies currents Ib1, Ib2for detecting resistances of magnetoresistive effect revealing bodies2a, 2b; an X-direction address decoder circuit32that supplies currents Iw1, Iw2to the magnetoresistive effect revealing bodies2a, 2b; and a current control circuit (constant current circuit25n) that carries out control so that the total of the current Ib1and the current Iw1and the total of the current Iw2and the current Ib2are respectively constant.

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English language Abstract of JP 1-149291.
English language Abstract of JP 2004-280910.
English language Abstract of JP 11-007778.
English language Abstract of JP 2004-178623.

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