Method of manufacturing a semiconductor device including...

Details Method of manufacturing a semiconductor device including... Method of manufacturing a semiconductor device including...

2008-12-16

2010-12-14

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S442000, C438S486000

Reexamination Certificate

active

07851327

ABSTRACT:
In a semiconductor device and a method of manufacturing the same, a first insulation layer is removed from a cell area of a substrate and a first active pattern is formed on the first area by a laser-induced epitaxial growth (LEG) process. Residuals of the first insulation layer are passively formed into a first device isolation pattern on the first area. The first insulation layer is removed from the second area of the substrate and a semiconductor layer is formed on the second area of the substrate by a SEG process. The semiconductor layer on the second area is patterned into a second active pattern including a recessed portion and a second insulation pattern in the recessed portion is formed into a second device isolation pattern on the second area. Accordingly, grain defects in the LEG process and lattice defects in the SEG process are mitigated or eliminated.

REFERENCES:
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patent: 2008/0179657 (2008-07-01), Tasaka
patent: 59194445 (1984-11-01), None
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patent: 20020034471 (2002-05-01), None
patent: 100650861 (2006-11-01), None

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