Hydrogen ashing enhanced with water vapor and diluent gas

Details Hydrogen ashing enhanced with water vapor and diluent gas Hydrogen ashing enhanced with water vapor and diluent gas

2007-04-19

2010-10-05

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S318000, C438S322000, C438S692000, C438S702000, C430S329000, C430S330000, C216S063000, C216S067000, C216S069000, C216S072000, C257S758000

Reexamination Certificate

active

07807579

ABSTRACT:
An oxygen-free hydrogen plasma ashing process particularly useful for low-k dielectric materials based on hydrogenated silicon oxycarbide materials. The main ashing step includes exposing a previously etched dielectric layer to a plasma of hydrogen and optional nitrogen, a larger amount of water vapor, and a yet larger amount of argon or helium. Especially for porous low-k dielectrics, the main ashing plasma additionally contains a hydrocarbon gas such as methane. The main ashing may be preceded by a short surface treatment by a plasma of a hydrogen-containing reducing gas such as hydrogen and optional nitrogen.

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