Pre-bias optical proximity correction

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C716S030000

Reexamination Certificate

active

07739650

ABSTRACT:
A pre-bias optical proximity correction (OPC) method allows faster convergence during OPC iterations, providing an initial set of conditions to edge fragments of a layout based on density conditions near the edge fragments.

REFERENCES:
patent: 4532650 (1985-07-01), Wihl et al.
patent: 4762396 (1988-08-01), Dumant et al.
patent: 5396584 (1995-03-01), Lee et al.
patent: 5502654 (1996-03-01), Sawahata
patent: 5655110 (1997-08-01), Krivokapic et al.
patent: 5723233 (1998-03-01), Garza et al.
patent: 5815685 (1998-09-01), Kamon
patent: 5825647 (1998-10-01), Tsudaka
patent: 5879844 (1999-03-01), Yamamoto et al.
patent: 5991006 (1999-11-01), Tsudaka
patent: 6016357 (2000-01-01), Neary et al.
patent: 6033814 (2000-03-01), Burdorf et al.
patent: 6042257 (2000-03-01), Tsudaka
patent: 6049660 (2000-04-01), Ahn et al.
patent: 6077310 (2000-06-01), Yamamoto et al.
patent: 6080527 (2000-06-01), Huang et al.
patent: 6120952 (2000-09-01), Pierrat et al.
patent: 6128067 (2000-10-01), Hashimoto
patent: 6187483 (2001-02-01), Capodieci et al.
patent: 6243855 (2001-06-01), Kobayashi et al.
patent: 6249904 (2001-06-01), Cobb
patent: 6263299 (2001-07-01), Aleshin et al.
patent: 6269472 (2001-07-01), Garza et al.
patent: 6301697 (2001-10-01), Cobb
patent: 6317859 (2001-11-01), Papadopoulou
patent: 6415421 (2002-07-01), Anderson et al.
patent: 6425113 (2002-07-01), Anderson et al.
patent: 6430737 (2002-08-01), Cobb et al.
patent: 6453457 (2002-09-01), Pierrat et al.
patent: 6467076 (2002-10-01), Cobb
patent: 6470489 (2002-10-01), Chang et al.
patent: 6487503 (2002-11-01), Inui
patent: 6499003 (2002-12-01), Jones et al.
patent: 6574784 (2003-06-01), Lippincott et al.
patent: 6643616 (2003-11-01), Granik et al.
patent: 6649309 (2003-11-01), Mukherjee
patent: 6665856 (2003-12-01), Pierrat et al.
patent: 6668367 (2003-12-01), Cobb et al.
patent: 6718526 (2004-04-01), Eldredge et al.
patent: 6748578 (2004-06-01), Cobb
patent: 6778695 (2004-08-01), Schellenberg et al.
patent: 6792590 (2004-09-01), Pierrat et al.
patent: 6815129 (2004-11-01), Bjorkholm et al.
patent: 6817003 (2004-11-01), Lippincott et al.
patent: 6857109 (2005-02-01), Lippincott
patent: 6862726 (2005-03-01), Futatsuya et al.
patent: 6887633 (2005-05-01), Tang
patent: 6928634 (2005-08-01), Granik et al.
patent: 6973633 (2005-12-01), Lippincott et al.
patent: 6989229 (2006-01-01), Lucas et al.
patent: 7010776 (2006-03-01), Gallatin et al.
patent: 7013439 (2006-03-01), Robles et al.
patent: 7017141 (2006-03-01), Anderson et al.
patent: 7024655 (2006-04-01), Cobb
patent: 7028284 (2006-04-01), Cobb et al.
patent: 7047516 (2006-05-01), Futatsuya
patent: 7073162 (2006-07-01), Cobb et al.
patent: 7155689 (2006-12-01), Pierrat et al.
patent: 7155699 (2006-12-01), Cobb
patent: 7172838 (2007-02-01), Maurer et al.
patent: 7181721 (2007-02-01), Lippincott et al.
patent: 7237221 (2007-06-01), Granik et al.
patent: 7240305 (2007-07-01), Lippincott
patent: 7240321 (2007-07-01), Cobb et al.
patent: 7281234 (2007-10-01), Lippincott
patent: 7293249 (2007-11-01), Torres Robles et al.
patent: 7324930 (2008-01-01), Cobb
patent: 7367009 (2008-04-01), Cobb et al.
patent: 7378202 (2008-05-01), Granik et al.
patent: 7392168 (2008-06-01), Granik et al.
patent: 2002/0026626 (2002-02-01), Randall et al.
patent: 2002/0094680 (2002-07-01), Lin
patent: 2003/0134205 (2003-07-01), Yu
patent: 2003/0208728 (2003-11-01), Pierrat
patent: 2004/0128118 (2004-07-01), Croffie et al.
patent: 2005/0050490 (2005-03-01), Futatsuya et al.
patent: 2005/0149901 (2005-07-01), Tang
patent: 2005/0177810 (2005-08-01), Heng et al.
patent: 2005/0229125 (2005-10-01), Tabery et al.
patent: 2005/0251771 (2005-11-01), Robles
patent: 2005/0278686 (2005-12-01), Word et al.
patent: 2006/0188796 (2006-08-01), Word
patent: 2006/0199084 (2006-09-01), Word
patent: 2006/0200790 (2006-09-01), Shang et al.
patent: 2006/0240342 (2006-10-01), Tang
patent: 2007/0006118 (2007-01-01), Pierrat et al.
patent: 2007/0074143 (2007-03-01), Cobb et al.
patent: 2007/0118826 (2007-05-01), Lippincott
patent: 2007/0124708 (2007-05-01), Robles et al.
patent: 2007/0204242 (2007-08-01), Brunet et al.
patent: 2007/0204256 (2007-08-01), Brunet et al.
patent: 2008/0141195 (2008-06-01), Robles et al.
patent: 2008/0148217 (2008-06-01), Park
patent: 2008/0166639 (2008-07-01), Park et al.
patent: 09-319067 (1997-12-01), None
patent: 2004-502961 (2004-01-01), None
patent: WO 99/14637 (1999-03-01), None
patent: WO 99/14638 (1999-03-01), None
patent: WO 01/65315 (2001-07-01), None
Adam et al., “Improved Modeling Performance with an Adapted Vectorial Formulation of the Hopkins imaging Equation,”Proceedings of SPIE: Optical Microlithography XVI,vol. 5040, pp. 78-91 (Feb. 25, 2003).
Bailey et al., “Intensive 2D SEM Model Calibration for 45nm and Beyond,”Proceedings of SPIE,vol. 6154, 10 pp. (Feb. 21, 2006).
Brist et al., “Illumination Optimization Effects on OPC and MDP,”Proceedings of SPIE,vol. 5754, pp. 1179-1189 (Mar. 1, 2005).
Brist et al., “Source Polarization and OPC Effects on Illumination Optimization,”Proceedings of SPIE, 25th Annual BACUS Symposium on Photomask Technology,vol. 5992, pp. 599232-1/9 (Oct. 3, 2005).
Cao et al., “Standard Cell Characterization Considering Lithography Induced Variations,”Design Automation Conference, 43rdACM/IEEE,pp. 801-804 (Jul. 24-28, 2006).
Chen et al., “An Automated and Fast OPC Algorithm for OPC-Aware Layout Design,”Int'l Symp. on Quality Electronic Design,pp. 782-787 (Mar. 26-28, 2007).
Cobb, “Flexible sparse and dense OPC algorithms,”Proceedings of SPIE, Photomask and Next-Generation Lithography Mask Technology XII,vol. 5853, pp. 693-702 (Apr. 13, 2005).
Cobb et al., “Model-based OPC using the MEEF matrix,”Proceedings of SPIE, 22nd Annual BACUS Symposium on Photomask Technology,vol. 4889, 10 pp. (Sept. 30-Oct. 4, 2002).
Cobb et al., “Large Area Phase-Shift Mask Design,”Proceedings of SPIE, Symposium on Optical/Laser Microlithography VII,vol. 2197, pp. 348-360 (Mar. 2-4, 1994).
Cobb et al., “Using OPC to optimize for image slope and improve process window,”Proceeding of SPIE, Photomask Japan,vol. 5130, pp. 838-846 (Apr. 16-18, 2003).
Cobb et al., “OPC methods to improve image slope and process window,”Proceedings of SPIE: Design and Process Integration for Microelectronic Manufacturing,vol. 5042, pp. 116-125 (Feb. 27, 2003).
Cobb et al., “Experimental Results on Optical Proximity Correction With Variable Threshold Resist Model,”Proceedings of SPIE: Symposium on Optical Microlithography X,vol. 3051, pp. 458-468 (Mar. 10-14, 1997).
Cobb et al., “Fast Sparse Aerial Image Calculation for OPC,”Proceedings of SPIE: 15th Annual BACUS Symposium on Photomask Technology and Management,vol. 2621, pp. 534-545 (Sept. 20-22, 1995).
Cobb et al., “Fast, Low-Complexity Mask Design,”Proceedings of SPIE: Symposium on Optical/Laser Microlithography VIII,vol. 2440, pp. 313-327 (Feb. 22-24, 1995).
Cobb et al., “Mathematical and CAD Framework for Proximity Correction,”Proceedings of SPIE: Symposium on Optical Microlithography IX,vol. 2726, pp. 208-222 (Mar. 13-15, 1996).
Cobb et al., “New Concepts in OPC,”Proceedings of SPIE: Optical Microlithography XVII,vol. 5377, pp. 680-690 (Feb. 24, 2004).
Dammel, “Photoresist for microlithography, or the Red Queen's race,”J. Microlithogr. Microfabrication Microsyst.,vol. 1, pp. 270-275 (Oct. 2002).
Drapeau et al., “Double patterning design split implementation and validation for the 32nm node,”Proc. SPIE,vol. 6521, pp. 652109-1 through 652109-15 (2007).
Granik, “Generalized MEEF Theory,”Interface 2001,13 pp. (Nov. 2001).
Granik, “New Process Models for OPC at sub-90nm Nodes,”Proceedings of SPIE: Optical Microlithography XVI,vol. 5040, pp. 1166-1175 (Feb. 25, 2003).
Granik, “Solving Inverse Problems of Optical Microlithography,”Proceedings of SPIE: Optical Microlithography XVIII,vol. 5754,

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Pre-bias optical proximity correction does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pre-bias optical proximity correction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pre-bias optical proximity correction will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4194926

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.