Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-12-29
2010-11-30
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C257SE21409, C257SE21407
Reexamination Certificate
active
07842594
ABSTRACT:
A semiconductor device includes a substrate having a recess in an area where a gate is to be formed, spacers formed over sidewalls of the recess, and a first gate electrode filling in the recess. The spacers include material having the first work function or insulation material. The first gate electrode includes material having a second work function, wherein the second work function is higher than that of the spacers.
REFERENCES:
patent: 7238599 (2007-07-01), Forbes
patent: 2004/0259311 (2004-12-01), Kim
patent: 2007/0057318 (2007-03-01), Bach et al.
Cho Heung-Jae
Jang Se-Aug
Yang Hong-Seon
Hynix / Semiconductor Inc.
Landau Matthew C
McCall-Shepard Sonya D
Townsend and Townsend / and Crew LLP
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