Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-07-10
2010-02-16
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S443000, C438S689000, C438S735000, C257S532000, C257SE21017, C257S295000
Reexamination Certificate
active
07662724
ABSTRACT:
A method for manufacturing a capacitor includes the steps of: forming a lower electrode above a base substrate; forming a dielectric film composed of ferroelectric material or piezoelectric material above the lower electrode; forming an upper electrode above the dielectric film; forming a silicon oxide film that covers at least the dielectric film and the upper electrode; and forming a hydrogen barrier film that covers the silicon oxide film.
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Kobayashi Daisuke
Nakayama Masao
Arora Ajay K
Harness & Dickey & Pierce P.L.C.
Le Thao X
Seiko Epson Corporation
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