Semiconductor device and method of forming the same

Details Semiconductor device and method of forming the same Semiconductor device and method of forming the same

2009-02-18

2010-10-05

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S501000, C257SE29018, C257SE29020

Reexamination Certificate

active

07808052

ABSTRACT:
A semiconductor device may include, but is not limited to, first and second well regions, and a well isolation region isolating the first and second well regions. The first and second well regions each may include an active region, a device isolation groove that defines the active region, and a device isolation insulating film that fills the device isolation groove. The first and second well regions may include first and second well layers, respectively. The well isolation region may include a well isolation groove, a well isolation insulating film that fills the well isolation groove, and a diffusion stopper layer disposed under a bottom of the well isolation groove. The first and second well layers have first and second bottoms respectively, which are deeper in depth than a bottom of the device isolation groove and shallower in depth than the bottom of the well isolation groove.

REFERENCES:
patent: 6674100 (2004-01-01), Kubo et al.
patent: 09-102586 (1997-04-01), None
patent: 2001-144276 (2001-05-01), None
patent: 2006-237208 (2006-09-01), None
patent: 2007-227920 (2007-09-01), None

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