CMOS image sensor and method of fabricating the same

Details CMOS image sensor and method of fabricating the same CMOS image sensor and method of fabricating the same

2009-02-12

2010-11-23

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S290000, C257S292000, C257SE27131, C438S435000, C438S221000, C438S210000, C438S218000, C438S222000

Reexamination Certificate

active

07838917

ABSTRACT:
A CMOS image sensor and method for fabricating the same, wherein the CMOS image sensor has minimized dark current at the boundary area between a photodiode and an isolation layer. The present invention includes a first-conductivity-type doping area formed in the device isolation area of the substrate, the first-conductivity-type doping area surrounding the isolation area and a dielectric layer formed between the isolation layer and the first-conductivity-type doping area, wherein the first-conductivity-type doping area and the dielectric layer are located between the isolation layer and a second-conductivity-type diffusion area.

REFERENCES:
patent: 5942803 (1999-08-01), Shim et al.
patent: 6214747 (2001-04-01), Chou et al.
patent: 6569700 (2003-05-01), Yang
patent: 7241671 (2007-07-01), Han
patent: 2004/0178430 (2004-09-01), Rhodes et al.
patent: 2004/0251481 (2004-12-01), Rhodes
patent: 2006/0057806 (2006-03-01), Dong
patent: 2004-369171 (2005-07-01), None
patent: 2001-0003139 (2001-01-01), None
patent: 2003-0056323 (2003-07-01), None
patent: WO 2004-081989 (2004-09-01), None

Affiliated with

Also associated with

Rating

CMOS image sensor and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS image sensor and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS image sensor and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4192672