Guard ring structures and method of fabricating thereof

Details Guard ring structures and method of fabricating thereof Guard ring structures and method of fabricating thereof

2008-09-30

2010-11-02

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

C257S487000

Reexamination Certificate

active

07825487

ABSTRACT:
A guard ring structure for use in a semiconductor device. The guard ring structure includes a semiconductor layer stack having a first layer and a second layer on top of the first layer, gates structures formed in the first layer; and guard rings formed in the first layer. The second layer has a dopant concentration that is higher than the dopant concentration of the first layer. The gates and the guard rings are formed simultaneously using a single mask.

REFERENCES:
patent: 6037632 (2000-03-01), Omura et al.
patent: 2005/0258454 (2005-11-01), Kumar et al.
patent: 2006/0097267 (2006-05-01), Kumar et al.
patent: 2007/0096145 (2007-05-01), Watanabe
patent: 2007/0096172 (2007-05-01), Tihanyi et al.

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