Semiconductor component having a drift zone and a drift...

Details Semiconductor component having a drift zone and a drift... Semiconductor component having a drift zone and a drift...

2008-09-30

2010-11-02

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S339000, C257S340000, C257S367000, C257S401000, C257S409000, C257SE29013, C257SE29029, C257SE29256, C257SE29325, C257SE29327

Reexamination Certificate

active

07825467

ABSTRACT:
A description is given of a normally on semiconductor component having a drift zone, a drift control zone and a drift control zone dielectric arranged between the drift zone and the drift control zone.

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patent: 7674678 (2010-03-01), Hiller et al.
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patent: 2007/0200183 (2007-08-01), Rueb et al.
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patent: 2009/0152667 (2009-06-01), Rieger et al.
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patent: 2009/0278198 (2009-11-01), Cao et al.
patent: 2010/0044720 (2010-02-01), Siemieniec et al.
patent: 2010/0052044 (2010-03-01), Hirler
patent: 2010/0055892 (2010-03-01), Poelzl

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