Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-01
2010-11-23
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S040000, C257S347000, C257S411000, C257SE29151, C257SE51007
Reexamination Certificate
active
07838916
ABSTRACT:
A thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor layer, and a gate insulating layer for insulating the source electrode and the drain electrode from the gate electrode, wherein the gate insulating layer includes composite particles in which a hydrophobic compound is provided on the surfaces of insulating inorganic particles.
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Chen et al., “Organic thin-film transistors with nanocomposite dielectric gate insualtor”, Applied Physics Letters, vol. 85, No. 15, pp. 3295-3297, Oct. 11, 2004.
Song, “Effects of Hydrophobic Treatment on the Performance of Pentacene TFT” IKEE International Transaction on EA, 12C-2, 136-138 (2002).
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Kawase Takeo
Moriya Soichi
Harness & Dickey & Pierce P.L.C.
Sefer A.
Seiko Epson Corporation
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