Thin-film transistor, electronic circuit, display unit, and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S040000, C257S347000, C257S411000, C257SE29151, C257SE51007

Reexamination Certificate

active

07838916

ABSTRACT:
A thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor layer, and a gate insulating layer for insulating the source electrode and the drain electrode from the gate electrode, wherein the gate insulating layer includes composite particles in which a hydrophobic compound is provided on the surfaces of insulating inorganic particles.

REFERENCES:
patent: 2004/0214381 (2004-10-01), Ohta
patent: 2005/0159001 (2005-07-01), Kim et al.
patent: 2005/0205861 (2005-09-01), Bao et al.
patent: 2005/0285102 (2005-12-01), Koo et al.
patent: 2006/0113523 (2006-06-01), Kubota et al.
patent: 2006/0231829 (2006-10-01), Wu et al.
patent: 2007/0215957 (2007-09-01), Chen et al.
patent: 2002-110999 (2002-04-01), None
patent: 2004-55649 (2004-02-01), None
Chen et al., “Organic thin-film transistors with nanocomposite dielectric gate insualtor”, Applied Physics Letters, vol. 85, No. 15, pp. 3295-3297, Oct. 11, 2004.
Song, “Effects of Hydrophobic Treatment on the Performance of Pentacene TFT” IKEE International Transaction on EA, 12C-2, 136-138 (2002).
“Plastic Data Book” published by Kogyo Chosakai Publishing, Inc. and written and edited by Asahi Kasei Amidas Co., Ltd. and the editorial department of “Plastics”, Dec. 1, 1999, pp. 187-188 (with English translation).

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