Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-12-14
2010-12-14
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S463000, C438S680000, C257SE21006, C257SE21170, C257SE21115, C257SE21347, C257SE21411, C257SE21400, C257SE31023, C257SE31028
Reexamination Certificate
active
07851278
ABSTRACT:
The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
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S.M.Sze “Semiconductor Devices. Physics and Technology. 2nd Edition”, © 2002 John Wiley and Sons.
Search Report (Application No. 04022673.0) dated Dec. 22, 2008.
Adachi Hiroki
Aoki Tomoyuki
Kusumoto Naoto
Maruyama Junya
Nishi Kazuo
Nhu David
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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