Spin-transfer torque memory self-reference read and write...

Details Spin-transfer torque memory self-reference read and write... Spin-transfer torque memory self-reference read and write...

2009-02-17

2010-11-02

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S173000, C365S213000, C365S131000, C365S048000, C365S050000

Reexamination Certificate

active

07826260

ABSTRACT:
A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage and storing the first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell, the magnetic field rotates the magnetization orientation of the free magnetic layer without switching a resistance state of the magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and the bit line read voltage is stored and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

REFERENCES:
patent: 6317356 (2001-11-01), Hoffman
patent: 6870760 (2005-03-01), Tsang
patent: 7102946 (2006-09-01), Pelella
patent: 7123505 (2006-10-01), Jeong
patent: 7170782 (2007-01-01), Conley
patent: 7187577 (2007-03-01), Wang
patent: 7224601 (2007-05-01), Panchula
patent: 7272034 (2007-09-01), Chen
patent: 7272035 (2007-09-01), Chen
patent: 7289356 (2007-10-01), Diao
patent: 7345912 (2008-03-01), Luo
patent: 7379327 (2008-05-01), Chen
patent: 7502249 (2009-03-01), Ding
patent: 7515457 (2009-04-01), Chen
patent: 2006/0013039 (2006-01-01), Braun
patent: 2006/0098498 (2006-05-01), Jeong
patent: 2006/0233018 (2006-10-01), Tanizaki
patent: 2007/0246787 (2007-10-01), Wang
patent: 2008/0310213 (2008-12-01), Chen
patent: 2008/0310219 (2008-12-01), Chen
patent: 2009/0040855 (2009-02-01), Luo
patent: 2009/0185410 (2009-07-01), Huai
U.S. Appl. No. 12/147,727, filed Jun. 27, 2008, Chen.
U.S. Appl. No. 12/372,180, filed Feb. 17, 2009, Zhu.

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