Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-12-30
2010-12-14
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C438S149000
Reexamination Certificate
active
07851800
ABSTRACT:
A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit.
REFERENCES:
patent: 2001/0019374 (2001-09-01), Izumi et al.
patent: 2001/0038367 (2001-11-01), Inukai
patent: 2002/0109796 (2002-08-01), Lin et al.
patent: 2005/0269562 (2005-12-01), Yang et al.
patent: 2006/0192487 (2006-08-01), Choi et al.
Ho Jia-Chong
Hu Tarng-Shiang
Lin Tsung-Hsien
Wang Yi-Kai
Yan Jing-Yi
Industrial Technology Research Institute
Jianq Chyun IP Office
Le Thao X
Trice Kimberly
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