Solid-state imaging device and method for driving the same

Details Solid-state imaging device and method for driving the same Solid-state imaging device and method for driving the same

2005-07-21

2010-12-28

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S222000, C257S223000, C257SE27132

Reexamination Certificate

active

07859032

ABSTRACT:
During an exposure time period (long accumulation time period) of a low shutter speed shooting mode, a second reference voltage Vss2, which is different from a first reference voltage Vss1(a ground voltage) corresponding to a reference voltage of a peripheral circuit, is applied to a well (5) where a photoelectric converter section (2) and a drain region (4) are formed, whereby generation of dark electrons at a portion of a surface of the well (5) below a gate electrode (6) is suppressed. A polarity of the second reference voltage Vss2is positive in the case where a conductivity type of the well (5) is a P-type, and is negative in the case of an N-type.

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