Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-02-13

2010-11-16

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S639000, C438S642000

Reexamination Certificate

active

07833903

ABSTRACT:
In a method of manufacturing a semiconductor device, a refractory metal film is stacked on a first wiring metal film. An antireflection film is deposited on the refractory metal film. A wiring including the first wiring metal film, the refractory metal film, and the antireflection film is formed, and an interlayer insulating film is formed on the wiring. The interlayer insulating film is etched to form a contact hole so that a surface of the antireflection film corresponds to an uppermost layer of the wiring and an etching by-product is produced on a sidewall of the contact hole. The etching by-product produced on the sidewall of the contact hole is then removed. Thereafter, a portion of the antireflection film located in a bottom portion of the contact hole is removed. A second wiring metal film is then deposited through the contact hole.

REFERENCES:
patent: 5440167 (1995-08-01), Iranmanesh
patent: 5451291 (1995-09-01), Park et al.
patent: 7253465 (2007-08-01), Yamamoto et al.
patent: 2005/0090087 (2005-04-01), Lu et al.
patent: 2006/0105573 (2006-05-01), Mahalingam et al.
Quirk; Semiconductor Manufacturing Technology; 2001; Ch. 12 pp. 308 and 314.
Quirk (Semiconductor Manufacturing Technology; 2001, Ch. 12 pp. 308 and 314).

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