SOI FET with source-side body doping

Details SOI FET with source-side body doping SOI FET with source-side body doping

2007-06-04

2010-02-02

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S302000

Reexamination Certificate

active

07655983

ABSTRACT:
An SOI FET device with improved floating body is proposed. Control of the body potential is accomplished by having a body doping concentration next to the source electrode higher than the body doping concentration next to the drain electrode. The high source-side dopant concentration leads to elevated forward leakage current between the source electrode and the body, which leakage current effectively locks the body potential to the source electrode potential. Furthermore, having the source-to-body junction capacitance larger than the drain-to-body junction capacitance has additional advantages in device operation. The device has no structure fabricated for the purpose of electrically connecting the body potential to other elements of the device.

REFERENCES:
patent: 5185280 (1993-02-01), Houston
patent: 5448513 (1995-09-01), Hu et al.
patent: 6596554 (2003-07-01), Unnikrishnan
patent: 6635542 (2003-10-01), Sleight
patent: 6861689 (2005-03-01), Burnett
“Universal tunneling behavior in technology relevant P/N junction diodes”, Journal of Applied Physics, vol. 95 (10), pp. 5800-5812, 2004, P. Solomon, et. al.

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