Semiconductor device including a P-type field-effect transistor

Details Semiconductor device including a P-type field-effect transistor Semiconductor device including a P-type field-effect transistor

2009-03-09

2010-10-12

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S627000, C257S649000, C257SE29151

Reexamination Certificate

active

07812398

ABSTRACT:
A semiconductor device and manufacturing method of the same is provided in which the driving current of a pMOSFET is increased, through a scheme formed easily using an existing silicon process. A pMOSFET is formed with a channel in a <100> direction on a (100) silicon substrate. A compressive stress is applied in a direction perpendicular to the channel by an STI.

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