Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2009-01-22

2010-11-16

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C257S405000, C257S406000

Reexamination Certificate

active

07834408

ABSTRACT:
It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.

REFERENCES:
patent: 4950620 (1990-08-01), Harrington, III
patent: 6563182 (2003-05-01), Horikawa
patent: 6875662 (2005-04-01), Iwasaki et al.
patent: 2005/0247985 (2005-11-01), Watanabe et al.
patent: 2006/0252193 (2006-11-01), Rabkin et al.
patent: 2002-280461 (2002-09-01), None
patent: 2004-031760 (2004-01-01), None
patent: 2004-103737 (2004-04-01), None
Machine translation of JP 2002-280461, printed Sep. 20, 2009.
Notification of Reasons for Rejection issued by the Japanese Patent Office on Jul. 13, 2010, for Japanese Patent Application No. 2005-232979, and English-language translation thereof.

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