Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2008-07-18
2010-10-19
Ghyka, Alexander G (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S059000, C257SE21121, C257SE21212, C438S149000, C438S099000, C438S082000
Reexamination Certificate
active
07816678
ABSTRACT:
Provided is an organic light emitting display, in which a semiconductor circuit unit of 2T-1C structure including a switching transistor and a driving transistor formed of single crystalline silicon is formed on a plastic substrate. A method of fabricating the single crystalline silicon includes: growing a single crystalline silicon layer to a predetermined thickness on a crystal growth plate; depositing a buffer layer on the single crystalline silicon layer; forming a partition layer at a predetermined depth in the single crystalline silicon layer by, e.g., implanting hydrogen ions in the single crystalline silicon layer from an upper portion of an insulating layer; attaching a substrate to the buffer layer; and releasing the partition layer of the single crystalline silicon layer by heating the partition layer from the crystal growth plate to obtain a single crystalline silicon layer of a predetermined thickness on the substrate.
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Noguchi Takashi
Xianyu Wenxu
Yin Huaxiang
Ghyka Alexander G
Harness & Dickey & Pierce P.L.C.
Nikmanesh Seahvosh J
Samsung Electronics Co,. Ltd.
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