Trench MOSFET structure having improved avalanche capability...

Details Trench MOSFET structure having improved avalanche capability... Trench MOSFET structure having improved avalanche capability...

2009-07-08

2010-10-19

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S332000, C257SE27091, C257SE29198, C257SE29200, C257SE29201, C257SE29257, C257SE29260, C257SE21548, C257SE21549, C257SE21550, C257SE21551, C257SE21553, C257SE21655

Reexamination Certificate

active

07816720

ABSTRACT:
A trench MOSFET structure having improved avalanche capability is disclosed, wherein the source region is formed by performing source Ion Implantation through contact open region of a thick contact interlayer, and further diffused to optimize a trade-off between Rds and the avalanche capability. Thus, only three masks are needed in fabrication process, which are trench mask, contact mask and metal mask. Furthermore, said source region has a doping concentration along channel region lower than along contact trench region, and source junction depth along channel region shallower than along contact trench, and source doping profile along surface of epitaxial layer has Gaussian-distribution from trenched source-body contact to channel region.

REFERENCES:
patent: 6657255 (2003-12-01), Hshieh et al.

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