Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2008-10-07
2010-12-07
Parker, Kenneth A (Department: 2815)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S593000, C438S265000, C438S694000
Reexamination Certificate
active
07846826
ABSTRACT:
A gate dielectric film, a poly-silicon film, a film of a refractory metal such as tungsten, and a gate cap dielectric film are sequentially laminated on a semiconductor substrate. The gate cap dielectric film and the refractory metal film are selectively removed by etching. Thereafter, a double protection film including a silicon nitride film and a silicon oxide film is formed on side surfaces of the gate cap dielectric film, the refractory metal film, and the poly-silicon film. The poly-silicon film is etched using the double protection film as a mask. Thereafter, the semiconductor substrate is light oxidized to form a silicon oxide film on side surfaces of the poly-silicon film. Accordingly, a junction leakage of a MOSFET having a gate electrode of a poly-metal structure, particularly, a memory cell transistor of a DRAM, can be further reduced.
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Okonogi Kensuke
Oyu Kiyonori
Chen David Z
Elpida Memory Inc.
McDermott Will & Emery LLP
Parker Kenneth A
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