Semiconductor device and fabrication method of the same

Details Semiconductor device and fabrication method of the same Semiconductor device and fabrication method of the same

2007-01-18

2010-11-23

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S791000

Reexamination Certificate

active

07838444

ABSTRACT:
A fabrication method of a semiconductor device includes forming a silicon nitride layer on a compound semiconductor layer with a plasma CVD method and selectively treating the compound semiconductor layer with use of the silicon nitride layer for a mask. The silicon nitride layer has a refraction index of less than 1.85. The compound semiconductor layer includes Ga.

REFERENCES:
patent: 5985771 (1999-11-01), Moore et al.
patent: 7291911 (2007-11-01), Usami
patent: 2005-317572 (2005-11-01), None

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