Magneto resistance element and magnetic random access memory

Details Magneto resistance element and magnetic random access memory Magneto resistance element and magnetic random access memory

2005-08-26

2010-10-12

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S214000

Reexamination Certificate

active

07813164

ABSTRACT:
A magneto-resistance element includes a free layer, a fixed layer and a non-magnetic layer interposed between the free layer and the fixed layer. The free layer has a first magnetic layer, a second magnetic layer, a third magnetic layer, a first non-magnetic layer interposed between the first magnetic layer and the second magnetic layer, and a second non-magnetic layer interposed between the second magnetic layer and the third magnetic layer. The first magnetic layer, the second magnetic layer and the third magnetic layer are coupled such that spontaneous magnetizations have a helical structure.

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