Electric element, memory device, and semiconductor...

Details Electric element, memory device, and semiconductor... Electric element, memory device, and semiconductor...

2007-01-19

2010-12-21

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000, C365S159000, C365S174000, C365S230060

Reexamination Certificate

active

07855910

ABSTRACT:
A memory device including a plurality of electric elements corresponding to a plurality of transistors on a one-to-one basis; a word line driver for driving a plurality of word lines; and a bit line/plate line driver for driving a plurality of bit lines and a plurality of plate lines. Each of the plurality of electric elements includes a first electrode connected to one of the transistors corresponding to the electric element, a second electrode connected to one of the plate lines corresponding to the electric element, and a variable-resistance film connected between the first electrode and the second electrode, and the variable-resistance film includes Fe3O4as a constituent element and has a crystal grain size of 5 nm to 150 nm.

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Gerstner, E. G., et al., “Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films,” Journal of Applied Physics, Nov. 15, 1998, p. 5647-5651, vol. 84, No. 10, American Institute of Physics.

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