Programmable power management using a nanotube structure

Details Programmable power management using a nanotube structure Programmable power management using a nanotube structure

2005-11-23

2010-02-02

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S800000, C977S938000

Reexamination Certificate

active

07655548

ABSTRACT:
Programmable power management using a nanotube structure is disclosed. In one embodiment, a method includes coupling a nanotube structure of an integrated circuit to a conductive surface when a command is processed, and enabling a group of transistors of the integrated circuit based on the coupling the nanotube structure to the conductive surface. A current may be applied to the nanotube structure to couple the nanotube structure to the conductive surface. The nanotube structure may be formed from a material chosen from one or more of a polymer, carbon, and a composite material. The group of transistors may be enabled during an activation sequence of the integrated circuit. In addition, one or more transistors of the group of transistors may be disengaged from the one or more power sources (e.g., to minimize leakage) when the nanotube structure is decoupled from the conductive surface.

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Actel Corporation; Power Sequencing and Management; Jun. 2006; 4 pgs; http://www.actel.com/documents/Fusion—Power—Sequencing—AB.pdf.

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