Semiconductor substrates having useful and transfer layers

Details Semiconductor substrates having useful and transfer layers Semiconductor substrates having useful and transfer layers

2008-06-16

2010-06-22

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S618000, C257SE23173, C257SE21522, C257SE21603, C438S107000, C438S455000, C438S458000

Reexamination Certificate

active

07741678

ABSTRACT:
A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower quality than that of one or both of the intermediate and useful layers. A bonding layer may be included on one of the intermediate layer or the useful layer, or both, to facilitate bonding of the layers an a thin layer may be provided between the useful layer and intermediate layer. These final substrates are useful in optic, electronic, or optoelectronic applications.

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