Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-06-02

2010-02-09

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S328000, C257S192000, C257SE29242

Reexamination Certificate

active

07659571

ABSTRACT:
A semiconductor device is provide with a semiconductor substrate, a groove formed in the semiconductor substrate, a gate insulting film formed on the inner wall of the groove, a gate electrode formed in the groove, and a source/drain region and an LDD region arranged in the direction that is substantially orthogonal to the substrate surface of the semiconductor substrate.

REFERENCES:
patent: 5270257 (1993-12-01), Shin
patent: 5793090 (1998-08-01), Gardner et al.
patent: 6177319 (2001-01-01), Chen
patent: 6274894 (2001-08-01), Wieczorek et al.
patent: 2006/0094194 (2006-05-01), Chen et al.
patent: 2004-095962 (2004-03-01), None
patent: 3640945 (2005-01-01), None
patent: 2005-039270 (2005-02-01), None
patent: 2004-0060119 (2004-07-01), None
patent: 2004-0060119 (2004-07-01), None
patent: 20040060119 (2004-07-01), None
Taiwanese Office Action, w/ English translation thereof, issued in Taiwanese Patent Application No. 095119540 dated Aug. 14, 2008.
Chinese Office Action, w/ English translation thereof, issued in Chinese Patent Application No. 2006100930152 dated on Aug. 22, 2008.

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