Staggered STRAM cell

Details Staggered STRAM cell Staggered STRAM cell

2009-01-29

2010-11-02

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S173000

Reexamination Certificate

active

07826259

ABSTRACT:
Spin-transfer torque memory having a free magnetic layer having a thickness extending in a out-of-plane direction and extending in a lateral direction in an in-plane direction between a first end portion and an opposing second end portion. A tunneling barrier separates a reference magnetic layer from the first end portion and forms a magnetic tunnel junction. A first electrode is in electrical communication with the reference magnetic layer and a second electrode is in electrical communication with the free magnetic layer second end portion such that current flows from the first electrode to the second electrode and passes through the free magnetic layer in the lateral direction to switch the magnetic tunnel junction between a high resistance state and a low resistance state.

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