Strained-channel fin field effect transistor (FET) with a...

Details Strained-channel fin field effect transistor (FET) with a... Strained-channel fin field effect transistor (FET) with a...

2007-10-30

2010-11-30

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S199000, C257SE21623

Reexamination Certificate

active

07842562

ABSTRACT:
A semiconductor device (and method for making the same) includes a strained-silicon channel formed adjacent a source and a drain, a first gate formed over a first side of the channel, a second gate formed over a second side of the channel, a first gate dielectric formed between the first gate and the strained-silicon channel, and a second gate dielectric formed between the second gate and the strained-silicon channel. The strained-silicon channel is non-planar.

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