Semiconductor storage device

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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C365S210130

Reexamination Certificate

active

07656732

ABSTRACT:
In a semiconductor storage device, such as a dynamic random access memory (DRAM), in which dynamic data is amplified and read on a bit line, a data line sense amplifier/write buffer connected to a data line of a memory array and a data line sense amplifier control signal generating logic circuit connected to a dummy data line of a dummy memory array are provided. A sense amplifier is activated in accordance with an output signal of the logic circuit.

REFERENCES:
patent: 6009040 (1999-12-01), Choi et al.
patent: 6504778 (2003-01-01), Uekubo
patent: 2002/0080670 (2002-06-01), Kawasumi
patent: 2003/0103397 (2003-06-01), Lee
patent: 2006/0050569 (2006-03-01), Shimizu
patent: 2007/0041260 (2007-02-01), Hong et al.
patent: 06-176568 (1994-06-01), None
patent: 07-093972 (1995-04-01), None

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