Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2008-08-13
2010-02-02
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S210130
Reexamination Certificate
active
07656732
ABSTRACT:
In a semiconductor storage device, such as a dynamic random access memory (DRAM), in which dynamic data is amplified and read on a bit line, a data line sense amplifier/write buffer connected to a data line of a memory array and a data line sense amplifier control signal generating logic circuit connected to a dummy data line of a dummy memory array are provided. A sense amplifier is activated in accordance with an output signal of the logic circuit.
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McDermott Will & Emery LLP
Panasonic Corporation
Phung Anh
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