Semiconductor device comprising multi-layer rectangular gate...

Details Semiconductor device comprising multi-layer rectangular gate... Semiconductor device comprising multi-layer rectangular gate...

2007-03-29

2010-10-12

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21657, C257SE21658, C257SE21659

Reexamination Certificate

active

07812399

ABSTRACT:
The present invention provides a semiconductor device which includes a gate electrode shaped in the form of an approximately quadrangular prism, including a laminated body of a gate oxide layer, a gate polysilicon layer and a gate silicon nitride layer provided in a first conduction type substrate, a second conduction type implantation region provided in a region outside the gate electrode, a sidewall that exposes a top face of the gate electrode and is formed by laminating a sidewall mask oxide layer covering side surfaces, an electron storage nitride layer and a sidewall silicon oxide layer, and a source/drain diffusion layer provided in the first conduction type substrate exposed from the gate electrode and the sidewall.

REFERENCES:
patent: 6049107 (2000-04-01), Peidous
patent: 6670240 (2003-12-01), Ogura et al.
patent: 6803620 (2004-10-01), Moriya et al.
patent: 2002/0137296 (2002-09-01), Satoh et al.
patent: 2003/0181005 (2003-09-01), Hachimine et al.
patent: 2004/0056291 (2004-03-01), Takashima
patent: 2004/0227177 (2004-11-01), Yoshioka et al.

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