Semiconductor component and method for fabricating it

Details Semiconductor component and method for fabricating it Semiconductor component and method for fabricating it

2006-02-23

2010-06-22

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S331000, C257S332000, C257S333000, C257S334000, C257S335000, C257S336000, C257SE29201, C365S149000

Reexamination Certificate

active

07741675

ABSTRACT:
A semiconductor component has a semiconductor body in which a trench structure is provided. An electrode structure embedded in the trench structure is at least partly insulated from its surroundings by an insulation structure, and is contact-connected in a contact-connecting region via a contact hole that penetrates through an upper region of the insulation structure. The semiconductor component has at least two trenches running next to one another, at least one of said trenches containing a part of the electrode structure. The trenches are oriented so that at least the regions of the insulation structure which are provided in the upper region of the trenches overlap one another in an overlap region. The contact hole is arranged above the at least two trenches in such a way that at least parts of the overlap region and at least one of the electrode structure parts are contact-connected via the contact hole.

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