Tantalum amide complexes for depositing tantalum-containing...

Details Tantalum amide complexes for depositing tantalum-containing... Tantalum amide complexes for depositing tantalum-containing...

2010-05-04

2010-11-23

Gonzalez, Porfirio Nazario (Department: 1621)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S096800, C427S126100, C427S255394, C556S042000

Reexamination Certificate

active

07838073

ABSTRACT:
Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

REFERENCES:
patent: 3843536 (1974-10-01), Johnston et al.
patent: 3978272 (1976-08-01), Donley
patent: 4147556 (1979-04-01), Donley
patent: 4401474 (1983-08-01), Donley
patent: 4510222 (1985-04-01), Okunaka et al.
patent: 4643913 (1987-02-01), Okunaka et al.
patent: 4933317 (1990-06-01), Johnson, Jr. et al.
patent: 4993361 (1991-02-01), Unvala
patent: 5045348 (1991-09-01), Brierley et al.
patent: 5130172 (1992-07-01), Hicks et al.
patent: 5204314 (1993-04-01), Kirlin et al.
patent: 5225561 (1993-07-01), Kirlin et al.
patent: 5266355 (1993-11-01), Wernberg et al.
patent: 5280012 (1994-01-01), Kirlin et al.
patent: 5376409 (1994-12-01), Kaloyeros et al.
patent: 5453494 (1995-09-01), Kirlin et al.
patent: 5504195 (1996-04-01), Leedham et al.
patent: 5536323 (1996-07-01), Kirlin et al.
patent: 5555154 (1996-09-01), Uchikawa et al.
patent: 5656329 (1997-08-01), Hampden-Smith et al.
patent: 5677002 (1997-10-01), Kirlin et al.
patent: 5679815 (1997-10-01), Kirlin et al.
patent: 5711816 (1998-01-01), Kirlin et al.
patent: 5820664 (1998-10-01), Gardiner et al.
patent: 5840897 (1998-11-01), Kirlin et al.
patent: 5876503 (1999-03-01), Roeder et al.
patent: 5894064 (1999-04-01), Hampden-Smith et al.
patent: 5916359 (1999-06-01), Baum et al.
patent: 5935283 (1999-08-01), Sweeney et al.
patent: 6006582 (1999-12-01), Bhandari et al.
patent: 6015917 (2000-01-01), Bhandari et al.
patent: 6018065 (2000-01-01), Baum et al.
patent: 6077571 (2000-06-01), Kaloyeros et al.
patent: 6110529 (2000-08-01), Gardiner et al.
patent: 6126996 (2000-10-01), Kirlin et al.
patent: 6143191 (2000-11-01), Baum et al.
patent: 6214105 (2001-04-01), Hintermaier et al.
patent: 6218518 (2001-04-01), Baum et al.
patent: 6265222 (2001-07-01), DiMeo et al.
patent: 6273951 (2001-08-01), Vaartstra
patent: 6277436 (2001-08-01), Stauf et al.
patent: 6284654 (2001-09-01), Roeder et al.
patent: 6340769 (2002-01-01), Baum et al.
patent: 6344079 (2002-02-01), Baum
patent: 6379748 (2002-04-01), Bhandari et al.
patent: 6399208 (2002-06-01), Baum et al.
patent: 6444264 (2002-09-01), Hintermaier et al.
patent: 6511936 (2003-01-01), Theopold et al.
patent: 6552209 (2003-04-01), Lei et al.
patent: 6593484 (2003-07-01), Yasuhara et al.
patent: 6821921 (2004-11-01), Theopold et al.
patent: 6960675 (2005-11-01), Chen et al.
patent: 6989457 (2006-01-01), Kamepalli et al.
patent: 7034169 (2006-04-01), Norman
patent: 7094284 (2006-08-01), Baum et al.
patent: 7112690 (2006-09-01), Chi et al.
patent: 7198815 (2007-04-01), Chen et al.
patent: 7205422 (2007-04-01), Norman
patent: 7323581 (2008-01-01), Gardiner et al.
patent: 7329768 (2008-02-01), Kamepalli et al.
patent: 7371878 (2008-05-01), Chen et al.
patent: 2002/0000175 (2002-01-01), Hintermaier et al.
patent: 2006/0292303 (2006-12-01), Millward et al.
patent: 2007/0117385 (2007-05-01), Chen et al.
patent: 2009/0004858 (2009-01-01), Chen et al.
patent: 2009/0032952 (2009-02-01), Chen et al.
patent: 2009/0087561 (2009-04-01), Chen et al.
patent: 43 32 890 (1994-03-01), None
patent: 59-168678 (1984-09-01), None
patent: H07-263431 (1995-10-01), None
patent: 08-074055 (1996-03-01), None
patent: 9304072 (1993-03-01), None
patent: 9608587 (1996-03-01), None
patent: 9640690 (1996-12-01), None
patent: 9900530 (1999-01-01), None
patent: 9927030 (1999-06-01), None
Allen, Frank. H. et al., “Tables of Bond Lengths Determined by X-ray and Neutron Diffraction”, “J. Chem. Soc. Perkin Tran. II”, Feb. 1987, pp. S1-S19.
Antinolo, A. et al. , “Bonding Interactions Between Three Adjacent Hydrogen Ligands. Preparation and Spectroscopic Properties of the Tantalum..”, 1988, pp. 1210-1212, vol. 17.
Antinolo, A. et al. , “Exchange Coupling in Niobocene Trihydrides, Nb(C5H3RR′)2H3, and Their Adducts with Copper Triad Cations . . .”, “Inorganic Chemistry”, 1996, pp. 7873-7881, vol. 35, No. 26.
Bilodeau, S. et al., “Dielectric properties of Very Thin Films of Ba.7Sr.3TiO3”, “Proceedings of the Int. Conf. on Solid State Devices and Materials”, 1997, pp. 797-799.
Bilodeau, S. et al., “Process and Thin Film Characteristics of TaN Deposited by MOCVD”, “Proceedings of the Int. Conf. on Solid State Devices and Materials”, 2001, pp. 609-612, Publisher: Materials Research Society.
Bradley, Donald C., et al., “Metallo-organic compounds containing metal-nitrogen bonds: Part I, some dialkyamino derivatives of titanium and . . .”, “J. Chem. Soc.”, Oct. 1960, pp. 3857-3861.
Bradley, Donald C., et al., “Metallo-organic compounds containing metal-nitrogen bonds: Part III, Dialkylamino compounds of tantalum”, “Canadian J. Chem.”, Jul. 12, 1962, pp. 1355-1360, vol. 40, No. 7.
Castro, A. et al. , “Mixed-dicyclopentadienyl niobium and tantalum complexes: synthesis and reactivity. X-ray molecular structures . . .”, “Journal of Organometallic Chemistry”, 1996, pp. 37-46, vol. 518, No. 1-2.
Chen, C. et al., “Synthesis and catalytic properties of oxalic amidinato complexes”, “J. Chem. Society, Dalton Trans.”, May 15, 2001, pp. 1761-1767, Publisher: The Royal Society of Chemistry.
Chisholm, M. et al., “Chloro(dimethylamido) Compounds of Tantalum(V): Preparations, Properties, and Structures of [Ta(NMe2)3Cl2]2 . . .”, “Inorganic Chemistry”, 1981, pp. 1859-1866, vol. 20.
Chiu, Hsin-Tien, et al., “Deposition of tantalum nitride thin films from ethylimidotantalum complex”, “J. Mater. Sci. Lett.”, Jan. 1992, pp. 96-98, vol. 11, No. 2.
Chiu, H. et al., “Deposition of tanatlum nitride thin films from ethylimidotanatlum”, “Journal of Materials Science Letters ll”, 1992, pp. 96-98.
Tsai, M.H., et al., “Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications”, “Thin Solid Films”, Dec. 1, 1995, pp. 531-536, vol. 270, No. 1-2.
Engbrecht, E. et al., “Chemical vapor deposition growth and properties of TaCxNy”, “Thin Solid Films”, 2002, pp. 145-150, vol. 418.
Fan, M. et al. , “Peculiar Hydride-Silyl Interactions in Group 5 Bent Metallocene Complexes, Studied by ab Initio Calculations”, “Organometallics”, 1998, pp. 1092-1100, vol. 17, No. 6.
Fix, Renaud, et al., “Chemical vapor deposition of vanadium, niobium, and tantalum nitride thin films”, “Chem. Mater.”, May 1993, pp. 614-619, vol. 5, No. 5.
Foust, D. et al. , “Photodegradation studies on di-n5-cyclopenta-dienyldimethyl-tantalum and some deuterated analogs”, “Journal of Organometallic Chemistry”, 1982, pp. 47-55, vol. 226, No. 1.
Gade, L. et al. , “New transition metal imido chemistry with diamido-donor ligands”, “Coordination Chemistry Reviews”, 2001, pp. 65-97, vol. 216-217.
Gillan, E. et al., “Volatility Studies on Gallium Chalcogenide Cubanes: Thermal Analysis and Determination of Sublimation Enthalpies”, “Chem. Mater.”, 1997, pp. 796-806, vol. 9, Publisher: American Chemical Society.
Hieber, K., “Structural and electrical properties of Ta and Ta nitrides deposited by chemical vapour deposition”, “Thin Solid Films”, Nov. 1974, pp. 157-164, vol. 24, No. 1.
Holloway, Karen, et al., “Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions”, “Journal of Applied Physics”, Jun. 1, 1992, pp. 5433-5444, vol. 71, No. 11.
Im, S. et al., “A Study on CVD TaN as a Diffusion Barrier for Cu In

Affiliated with

Also associated with

Rating

Tantalum amide complexes for depositing tantalum-containing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tantalum amide complexes for depositing tantalum-containing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tantalum amide complexes for depositing tantalum-containing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4181187