Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-02-01
2010-11-16
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S320000
Reexamination Certificate
active
07834386
ABSTRACT:
A memory system is disclosed that includes a set of non-volatile storage elements. Each of the non-volatile storage elements includes source/drain regions at opposite sides of a channel in a substrate and a floating gate stack above the channel. The memory system also includes a set of shield plates positioned between adjacent floating gate stacks and electrically connected to the source/drain regions for reducing coupling between adjacent floating gates. The shield plates are selectively grown on the active areas of the memory without being grown on the inactive areas. In one embodiment, the shield plates are epitaxially grown silicon positioned above the source/drain regions.
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Lutze Jeffrey W.
Mokhlesi Nima
Louie Wai-Sing
Sandisk Corporation
Tang Sue
Vierra Magen Marcus & DeNiro LLP
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