Low-k isolation spacers for conductive regions

Details Low-k isolation spacers for conductive regions Low-k isolation spacers for conductive regions

2009-12-31

2010-11-09

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S900000, C257SE27060, C257SE29131

Reexamination Certificate

active

07829943

ABSTRACT:
A multi-component low-k isolation spacer for a conductive region in a semiconductor structure is described. In one embodiment, a replacement isolation spacer process is utilized to enable the formation of a two-component low-k isolation spacer adjacent to a sidewall of a gate electrode in a MOS-FET device.

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Non-Final Office Action from U.S. Appl. No. 11/500,628, mailed Jul. 8, 2009, 13 pages.

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