Semiconductor storage device

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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Details

C365S205000

Reexamination Certificate

active

07821817

ABSTRACT:
In a semiconductor storage device including a transistor for reading port, undesired voltage decrease may occur in a bit line in a reading operation due to a leak current from the transistor for reading port of a memory cell, which may cause a reading error. A semiconductor storage device according to one aspect of the present invention includes a third transistor having one of a source and a drain connected to a first bit line and switching supply of a ground voltage performed on the first bit line in accordance with a value held in a memory cell according to selection and non-selection of the memory cell, and a fixed voltage keeping circuit keeping a potential of the other of the source and the drain of the third transistor to a fixed potential in a memory cell non-selected state in a six-transistor SRAM.

REFERENCES:
patent: 2006/0039180 (2006-02-01), Kawasumi
patent: 2007/0279965 (2007-12-01), Nakazato et al.
patent: 2004-288306 (2004-10-01), None
patent: 2006-59520 (2006-03-01), None

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