Thin film transistor substrate and method of manufacturing...

Details Thin film transistor substrate and method of manufacturing... Thin film transistor substrate and method of manufacturing...

2006-06-19

2010-02-23

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S030000, C438S128000, C438S149000, C438S151000, C438S157000, C438S161000, C438S283000, C257S059000, C257SE21414

Reexamination Certificate

active

07666697

ABSTRACT:
A thin film transistor (TFT) substrate having an improved wire structure without an under-cut phenomenon that may occur during formation of a gate wire having a double-layered structure and a method of manufacturing the same are provided, where the method includes forming a first metal layer made of at least one low resistance material selected from the group consisting of Al, AlNd, Cu, and Ag, forming a second metal layer made of at least one heat-resistant, etch-resistant material selected from the group consisting of Cr, CrNx, Ti, Mo, and MoW on the first metal layer, forming an etch mask on the second metal layer, sequentially etching the second metal layer and the first metal layer using the etch mask, and forming a second metal layer pattern and a first metal layer pattern, respectively, and selectively re-etching the second metal layer pattern using the etch mask to make a width of the second metal layer pattern smaller than or substantially equal to a width of the first metal layer pattern, and completing a gate wire.

REFERENCES:
patent: 6333518 (2001-12-01), Seo
patent: 6849873 (2005-02-01), Baek et al.
patent: 6933568 (2005-08-01), Yang et al.
patent: 7189998 (2007-03-01), Cha et al.
patent: 2005/0024549 (2005-02-01), Gotoh et al.
patent: 2006/0139504 (2006-06-01), Ahn et al.

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