Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-02-10
2010-12-07
Sandvik, Benjamin P (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29309, C257S315000
Reexamination Certificate
active
07847343
ABSTRACT:
Provided is a nonvolatile semiconductor memory device having a split gate structure, wherein a memory gate is formed over a convex shaped substrate and side surfaces of it is used as a channel. The nonvolatile semiconductor memory device according to the present invention is excellent in read current driving power even if a memory cell is scaled down.
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Hisamoto Digh
Ishimaru Tetsuya
Kimura Shin'ichiro
Yasui Kan
Miles & Stockbridge P.C.
Renesas Electronics Corporation
Sandvik Benjamin P
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