Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-02-10
2010-02-16
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S788000, C257SE21576, C257SE21276
Reexamination Certificate
active
07662712
ABSTRACT:
A method for fabricating a semiconductor device includes providing a semiconductor substrate comprising a patterned metal conductor layer. To provide UV blocking, an overlying separation layer is formed over the substrate, and a UV blocking layer of silicon enriched oxide is formed over the separation layer. The UV blocking layer has a silicon atomic concentration sufficient for ultraviolet blocking. A gap-filling, hydrogen-blocking layer may be formed over the semiconductor substrate, and any the UV blocking layer, to prevent hydrogen from passing therethrough.
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Chen Lee Jen
Luo Shing Ann
Su Chin Ta
Coleman W. David
Crawford Latanya
Hann James F.
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
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