Nonvolatile organic bistable memory device and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C257SE51008, C257SE51025, C257SE51027, C257SE51039, C257SE51040, C365S148000, C977S735000, C977S742000, C977S779000, C977S785000, C977S943000

Reexamination Certificate

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07858978

ABSTRACT:
A nonvolatile organic bistable memory device includes a substrate, a lower electrode disposed on the substrate, a lower charge injection layer disposed on the lower electrode, an insulating polymer layer including nanoparticles disposed on the lower charge injection layer, an upper charge injection layer disposed on the insulating polymer layer, and an upper electrode disposed on the upper charge injection layer. The lower and upper charge injection layers each include fullerenes and/or carbon nanotubes.

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