Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2005-11-10

2010-06-01

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27064, C257SE27062, C438S199000, C326S081000, C326S068000

Reexamination Certificate

active

07728386

ABSTRACT:
The invention provides a CMOS integrated circuit capable of carrying out an operation at a comparatively high supply voltage, comprising a first MOS type transistor having a drain profile to come in contact with a gate through a low concentration region having an impurity concentration which is equal to or lower than a predetermined concentration at a drain end, and a second MOS type transistor and transfer gate having the same polarity which is connected to a gate of the first MOS type transistor, wherein a gate voltage is applied to the gate of the first MOS type transistor through the second MOS type transistor and transfer gate to which a predetermined potential (a shielding voltage) is applied.

REFERENCES:
patent: 5465054 (1995-11-01), Erhart
patent: 6229382 (2001-05-01), Kojima
patent: 3190915 (2001-05-01), None
Plummer, Silicon VLSI Technology Fundamentals, Practice and Modeling, 2000, Prentice Hall, p. 17.

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